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http://bura.brunel.ac.uk/handle/2438/5734| Title: | Transport mechanisms in porous silicon |
| Authors: | Ray, AK Mabrook, MF Nabok, AV Brown, S |
| Keywords: | Silicon;Elemental semiconductors;Porous materials;Semiconductor thin films;Metal-semiconductor-metal structures;Rectification;Semiconductor junctions |
| Issue Date: | 1998 |
| Publisher: | American Institute of Physics |
| Citation: | Journal of Applied Physics, 84(6): 3232-3235, 1998 |
| Abstract: | The current transport mechanism through porous silicon (PS) films fabricated from 8 to 12 Omega cm p-type silicon (p-Si) substrates has been investigated using current-voltage I(V) measurements on metal/PS/p-Si/metal devices in the temperature range of 77-300 K. The characteristics for all devices show a rectifying behavior with ideality factor very close to unity. A value of 0.7 eV is obtained for the barrier height at the interface between PS and bulk p-Si at room temperature and the barrier height is found to increase with rising temperature. A band model is proposed in order to explain the observed characteristics. |
| Description: | Copyright @ 1998 American Institute of Physics. |
| URI: | http://jap.aip.org/resource/1/japiau/v84/i6/p3232_s1 http://bura.brunel.ac.uk/handle/2438/5734 |
| DOI: | http://dx.doi.org/10.1063/1.368476 |
| ISSN: | 0021-8979 |
| Appears in Collections: | Publications |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| Fulltext.pdf | 64.15 kB | Adobe PDF | View/Open |
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