Please use this identifier to cite or link to this item: http://bura.brunel.ac.uk/handle/2438/5734
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dc.contributor.authorRay, AK-
dc.contributor.authorMabrook, MF-
dc.contributor.authorNabok, AV-
dc.contributor.authorBrown, S-
dc.date.accessioned2011-08-01T10:05:23Z-
dc.date.available2011-08-01T10:05:23Z-
dc.date.issued1998-
dc.identifier.citationJournal of Applied Physics, 84(6): 3232-3235, 1998en_US
dc.identifier.issn0021-8979-
dc.identifier.urihttp://jap.aip.org/resource/1/japiau/v84/i6/p3232_s1en
dc.identifier.urihttp://bura.brunel.ac.uk/handle/2438/5734-
dc.descriptionCopyright @ 1998 American Institute of Physics.en_US
dc.description.abstractThe current transport mechanism through porous silicon (PS) films fabricated from 8 to 12 Omega cm p-type silicon (p-Si) substrates has been investigated using current-voltage I(V) measurements on metal/PS/p-Si/metal devices in the temperature range of 77-300 K. The characteristics for all devices show a rectifying behavior with ideality factor very close to unity. A value of 0.7 eV is obtained for the barrier height at the interface between PS and bulk p-Si at room temperature and the barrier height is found to increase with rising temperature. A band model is proposed in order to explain the observed characteristics.en_US
dc.languageEN-
dc.language.isoenen_US
dc.publisherAmerican Institute of Physicsen_US
dc.subjectSiliconen_US
dc.subjectElemental semiconductorsen_US
dc.subjectPorous materialsen_US
dc.subjectSemiconductor thin filmsen_US
dc.subjectMetal-semiconductor-metal structuresen_US
dc.subjectRectificationen_US
dc.subjectSemiconductor junctionsen_US
dc.titleTransport mechanisms in porous siliconen_US
dc.typeResearch Paperen_US
dc.identifier.doihttp://dx.doi.org/10.1063/1.368476-
pubs.organisational-data/Brunel-
pubs.organisational-data/Brunel/Brunel (Active)-
pubs.organisational-data/Brunel/Brunel (Active)/Research Centres-
pubs.organisational-data/Brunel/Research Centres-
pubs.organisational-data/Brunel/Research Centres/WOLFSON-
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