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http://bura.brunel.ac.uk/handle/2438/24141Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Ji, X | - |
| dc.contributor.author | Lai, CS | - |
| dc.contributor.author | Zhou, G | - |
| dc.contributor.author | Dong, Z | - |
| dc.contributor.author | Qi, D | - |
| dc.contributor.author | Lai, LL | - |
| dc.date.accessioned | 2022-02-18T17:50:14Z | - |
| dc.date.available | 2022-02-18T17:50:14Z | - |
| dc.date.issued | 2022-02-16 | - |
| dc.identifier | ORCID iD: Chun Sing Lai https://orcid.org/0000-0002-4169-4438 | - |
| dc.identifier.citation | Ji, X. et al. (2022) 'A Flexible Memristor Model with Electronic Resistive Switching Memory Behavior and its Application in Spiking Neural Network', IEEE Transactions on NanoBioscience, 22 (1), pp. 52 - 62. doi: 10.1109/TNB.2022.3152228. | en_US |
| dc.identifier.issn | 1536-1241 | - |
| dc.identifier.uri | https://bura.brunel.ac.uk/handle/2438/24141 | - |
| dc.description.sponsorship | National Natural Science Foundation of China under Grant U1909201, Grant 62001149; Natural Science Foundation of Zhejiang Province under Grant LQ21F010009. | en_US |
| dc.format.extent | 52 - 62 | - |
| dc.format.medium | Print-Electronic | - |
| dc.language.iso | en_US | en_US |
| dc.publisher | Institute of Electrical and Electronics Engineers (IEEE) | en_US |
| dc.rights | Copyright © 2022 Institute of Electrical and Electronics Engineers (IEEE). Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works by sending a request to pubs-permissions@ieee.org. See: https://www.ieee.org/publications/rights/rights-policies.html | - |
| dc.rights.uri | https://www.ieee.org/publications/rights/rights-policies.html | - |
| dc.subject | Electronic resistive switching memory behavior | en_US |
| dc.subject | memristor | en_US |
| dc.subject | performance test | en_US |
| dc.subject | spiking neural network | en_US |
| dc.title | A Flexible Memristor Model with Electronic Resistive Switching Memory Behavior and its Application in Spiking Neural Network | en_US |
| dc.type | Article | en_US |
| dc.identifier.doi | https://doi.org/10.1109/tnb.2022.3152228 | - |
| dc.relation.isPartOf | IEEE Transactions on NanoBioscience | - |
| pubs.issue | 1 | - |
| pubs.publication-status | Published | - |
| pubs.volume | 22 | - |
| dc.identifier.eissn | 1558-2639 | - |
| dc.rights.holder | Institute of Electrical and Electronics Engineers (IEEE) | - |
| Appears in Collections: | Dept of Electronic and Electrical Engineering Research Papers | |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| FullText.pdf | Copyright © 2022 Institute of Electrical and Electronics Engineers (IEEE). Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works by sending a request to pubs-permissions@ieee.org. See: https://www.ieee.org/publications/rights/rights-policies.html | 4.74 MB | Adobe PDF | View/Open |
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