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Results 11-20 of 34 (Search time: 0.015 seconds).
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Issue DateTitleAuthor(s)
18-Oct-2022Effects of Si solution in θ-Al13Fe4 on phase transformation between Fe-containing intermetallic compounds in Al alloysQue, Z; Fang, C; Mendis, C; Wang, Y; Fan, Z
31-Oct-2014The accurate calculation of the band gap of liquid water by means of GW corrections applied to plane-wave density functional theory molecular dynamics simulationsFang, C; Li, W-F; Koster, RS; Klimeš, J; van Blaaderen, A; van Huis, MA
10-Mar-2020Stability, geometry and electronic properties of BH<sub>n</sub> (n = 0 to 3) radicals on the Si{0 0 1}3×1:H surface from first-principlesFang, C; Mohammodi, V; Nihtianov, S; Sluiter, M
28-Mar-2022Atomic Ordering at the Interfaces between Liquid Aluminum and Polar AlN{0 0 0 1} SubstratesFang, C; Fan, Z
9-Jul-2018An ab initio study on stacking and stability of TiAl 3 phasesFang, C; Fan, Z
1-Aug-2018A Comparative Study of Prenucleation on Zr and MgO Substrates by ab initio MD SimulationsFan, Z; Fang, C
12-Oct-2021Author Correction: A doping-less junction-formation mechanism between n-silicon and an atomically thin boron layerMohammadi, V; Nihtianov, S; Fang, C
9-Feb-2021Interfaces between crystalline Si and amorphous B: Interfacial interactions and charge barriersFang, PX; Nihtianov, S; Sberna, P; Fang, C
16-Jul-2018Direct observation of Eu atoms in AlN lattice and the first-principles simulationsYin, L; Zhang, S; Wang, H; Jian, X; Wang, X; Xu, X; Liu, M; Fang, C
16-Oct-2017A doping-less junction-formation mechanism between n-silicon and an atomically thin boron layerMohammadi, V; Nihtianov, S; Fang, C