Please use this identifier to cite or link to this item: http://bura.brunel.ac.uk/handle/2438/14886
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dc.contributor.authorCapan, R-
dc.contributor.authorRay, AK-
dc.date.accessioned2017-07-06T12:19:22Z-
dc.date.available2017-07-06T12:19:22Z-
dc.date.issued2017-
dc.identifier.citationJournal of Electronic Materials, (2017)en_US
dc.identifier.issn0361-5235-
dc.identifier.urihttp://bura.brunel.ac.uk/handle/2438/14886-
dc.description.abstractAlternating current (AC) impedance measurements were performed on thick nanostructured sol-gel derived anatase titania films on ultrasonically cleaned (100) p-silicon substrates at temperatures ranging from to over a frequency range between 20Hz and 1 MHz. The frequency dependent behaviour of the AC conductivity obeys the universal power law and the values of the effective hopping barrier and hopping distance were found to be and from an analysis due to the correlated barrier hopping model. The dielectric relaxation was identified as a thermally activated non-Debye process involving an activation energy of .en_US
dc.description.sponsorshipDr. R Capan is grateful to the Leverhulme Trust Foundation for the award of a fellowship to visit the UK. Gratitude is also due to Dr Lesley Hanna, Dr Myles Worsley and Miss Virginia Martin Torrejon of Institute of Materials and Manufacturing, Brunel University London for help in preparing the manuscript.en_US
dc.language.isoenen_US
dc.publisherSpringeren_US
dc.subjectMetal–insulator–semiconductor deviceen_US
dc.subjectHopping conductionen_US
dc.subjectComplex dielectric modulusen_US
dc.subjectRelaxation timeen_US
dc.titleDielectric measurements on sol-gel derived titania filmsen_US
dc.typeArticleen_US
dc.identifier.doihttp://dx.doi.org/10.1007/s11664-017-5670-y-
dc.relation.isPartOfJournal of Electronic Materials-
pubs.publication-statusAccepted-
Appears in Collections:Dept of Mechanical and Aerospace Engineering Research Papers

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