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http://bura.brunel.ac.uk/handle/2438/23947| Title: | Author Correction: A doping-less junction-formation mechanism between n-silicon and an atomically thin boron layer |
| Authors: | Mohammadi, V Nihtianov, S Fang, C |
| Issue Date: | 12-Oct-2021 |
| Publisher: | Springer Science and Business Media LLC |
| Citation: | Mohammadi, V., Nihtianov, S. and Fang, C. (2021) 'Author Correction: A doping-less junction-formation mechanism between n-silicon and an atomically thin boron layer', Scientific Reports, 11, 20579, pp. 1-2. doi: 10.1038/s41598-021-99821-9. |
| URI: | https://bura.brunel.ac.uk/handle/2438/23947 |
| DOI: | https://doi.org/10.1038/s41598-021-99821-9 |
| Other Identifiers: | 20579 |
| Appears in Collections: | Brunel Centre for Advanced Solidification Technology (BCAST) |
Files in This Item:
| File | Description | Size | Format | |
|---|---|---|---|---|
| FullText.pdf | 754.28 kB | Adobe PDF | View/Open |
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