Please use this identifier to cite or link to this item: http://bura.brunel.ac.uk/handle/2438/25920
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dc.contributor.authorLai, CS-
dc.contributor.authorDong, Z-
dc.contributor.authorQi, D-
dc.date.accessioned2023-02-06T12:54:58Z-
dc.date.available2023-02-06T12:54:58Z-
dc.date.issued2023-02-02-
dc.identifierORCID iDs: Chun Sing Lai https://orcid.org/0000-0002-4169-4438; Zhekang Dong https://orcid.org/0000-0003-4639-3834.-
dc.identifier765-
dc.identifier.citationLai, C.S., Dong, Z. and Qi, D. (2023) 'Memristive Devices and Systems: Modeling, Properties and Applications', Electronics, 12 (3), 765, pp. 1 - 3. doi: 10.3390/electronics12030765.en_US
dc.identifier.urihttps://bura.brunel.ac.uk/handle/2438/25920-
dc.description.abstractCopyright © 2023 The Authors. The memristor is considered to be a promising candidate for next-generation computing systems due to its nonvolatility, high density, low power, nanoscale geometry, nonlinearity, binary/multiple memory capacity, and negative differential resistance. [...]en_US
dc.description.sponsorshipThis research received no external funding.en_US
dc.format.extent1 - 3-
dc.languageEnglish-
dc.language.isoen_USen_US
dc.publisherMDPI AGen_US
dc.rightsCopyright: © 2023 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).-
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/-
dc.titleMemristive Devices and Systems: Modeling, Properties and Applicationsen_US
dc.typeArticleen_US
dc.identifier.doihttps://doi.org/10.3390/electronics12030765-
dc.relation.isPartOfElectronics-
pubs.issue3-
pubs.publication-statusPublished online-
pubs.volume12-
dc.identifier.eissn2079-9292-
dc.rights.holderThe authors-
Appears in Collections:Dept of Electronic and Electrical Engineering Research Papers

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