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Please use this identifier to cite or link to this item: http://bura.brunel.ac.uk/handle/2438/14105
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dc.contributor.authorGriffiths, JT-
dc.contributor.authorZhang, S-
dc.contributor.authorRouet-Leduc, B-
dc.contributor.authorFu, WY-
dc.contributor.authorBao, A-
dc.contributor.authorZhu, D-
dc.contributor.authorWallis, DJ-
dc.contributor.authorHowkins, A-
dc.contributor.authorBoyd, I-
dc.contributor.authorStowe, D-
dc.contributor.authorKappers, MJ-
dc.contributor.authorHumphreys, CJ-
dc.contributor.authorOliver, RA-
dc.date.accessioned2017-02-23T09:31:42Z-
dc.date.available2015-11-01-
dc.date.available2017-02-23T09:31:42Z-
dc.date.issued2015-
dc.identifier.citationNANO LETTERS, 2015, 15 (11), pp. 7639 - 7643 (5)en_US
dc.identifier.issnhttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000364725400070&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=f12c8c83318cf2733e615e54d9ed7ad5-
dc.identifier.issnhttp://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000364725400070&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=f12c8c83318cf2733e615e54d9ed7ad5-
dc.identifier.issn1530-6984-
dc.identifier.issn1530-6992-
dc.identifier.urihttp://bura.brunel.ac.uk/handle/2438/14105-
dc.description.abstractNanocathodoluminescence reveals the spectral properties of individual InGaN quantum wells in high efficiency light emitting diodes. We observe a variation in the emission wavelength of each quantum well, in correlation with the Si dopant concentration in the quantum barriers. This is reproduced by band profile simulations, which reveal the reduction of the Stark shift in the quantum wells by Si doping. We demonstrate nanocathodoluminescence is a powerful technique to optimize doping in optoelectronic devices.en_US
dc.format.extent7639 - 7643 (5)-
dc.languageEnglish-
dc.language.isoenen_US
dc.publisherAmerican Chemical Societyen_US
dc.subjectScience & Technologyen_US
dc.subjectPhysical Sciencesen_US
dc.subjectTechnologyen_US
dc.subjectChemistry, Multidisciplinaryen_US
dc.subjectChemistry, Physicalen_US
dc.subjectNanoscience & Nanotechnologyen_US
dc.subjectMaterials Science, Multidisciplinaryen_US
dc.subjectPhysics, Applieden_US
dc.subjectPhysics, Condensed Matteren_US
dc.subjectChemistryen_US
dc.subjectScience & Technology - Other Topicsen_US
dc.subjectMaterials Scienceen_US
dc.subjectPhysicsen_US
dc.subjectNanocathodoluminescenceen_US
dc.subjectscanning transmission electron microscopyen_US
dc.subjectInGaN optoelectronicsen_US
dc.subjectlight emitting diodesen_US
dc.subjectquantum confined Stark effecten_US
dc.subjectsilicon dopingen_US
dc.subjectOPTICAL-PROPERTIESen_US
dc.subjectSPATIAL-RESOLUTIONen_US
dc.subjectDIFFUSION LENGTHen_US
dc.subjectGANen_US
dc.subjectCATHODOLUMINESCENCEen_US
dc.subjectHETEROSTRUCTURESen_US
dc.subjectEFFICIENCYen_US
dc.subjectSPECTRAen_US
dc.titleNanocathodoluminescence reveals mitigation of the stark shift in InGaN quantum wells by Si dopingen_US
dc.typeArticleen_US
dc.identifier.doihttp://dx.doi.org/10.1021/acs.nanolett.5b03531-
dc.relation.isPartOfNANO LETTERS-
pubs.issue11-
pubs.publication-statusPublished-
pubs.volume15-
Appears in Collections:The Experimental Techniques Centre

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