Nanostructured silicon oxide film for enhanced crystalline solar cell

Abstract

In this study, we investigate the potential use of silicon oxide layer as one possible way to increase the silicon solar efficiency at low cost. The layer is fabricated on top of commercially available monocrystalline silicon (mc-Si) solar cells by low temperature Plasma Enhanced Chemical Vapour Deposition (PECVD) using Tetramythyle-Silane (TMS), (C4H12Si) precursor and oxidized by means of potassium permanganate (KMn04) agent. This study compares the electrical and optical characteristics of monocrystalline silicon cells before and after coating. The PV cells surface chemical composition was analyzed using Scanning Electron Microscopy (SEM). Reflectance and transmittance analysis results are also presented. The experimental results show a relative enhancement of about 10% (from 12.14% to 13.34%) in the monocrystalline cell electrical efficiency conversion.