Please use this identifier to cite or link to this item: http://bura.brunel.ac.uk/handle/2438/11257
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dc.contributor.authorChaure, NB-
dc.contributor.authorCammidge, AN-
dc.contributor.authorChambrier, I-
dc.contributor.authorCook, MJ-
dc.contributor.authorRay, AK-
dc.date.accessioned2015-08-20T10:17:59Z-
dc.date.available2015-
dc.date.available2015-08-20T10:17:59Z-
dc.date.issued2015-
dc.identifier.citationECS Journal of Solid State Science and Technology, 2015, 4 (4), pp. P3086 - P3090en_US
dc.identifier.issn2162-8769-
dc.identifier.issn2162-8777-
dc.identifier.urihttp://bura.brunel.ac.uk/handle/2438/11257-
dc.description.abstractThe characteristics of bottom-gate bottom-contact organic thin film field-effect transistors (OTFTs) with 70 nm thick films of solution processed non-peripherally octahexyl-substituted nickel tetrabenzo triazaporphyrin (6NiTBTAP) molecules as active layers on silicon substrates are experimentally studied and the results are compared with the similary configured transistors using the corresponding nickel phthalocyanine (6NiPc) compound. 6NiTBTAP transistors are found to exhibit improved performance over 6NiPc transistors in terms of greater saturation hole mobility, two orders of magnitude higher on/off ratio and lower threshold voltage. This enhanced performance of 6NiTBTAP OTFTs over 6NiPc devices is attributed to improved surface morphology and large grain size of the active 6NiTBTAP film.en_US
dc.format.extentP3086 - P3090-
dc.languageeng-
dc.language.isoenen_US
dc.publisherElectrochemical Society Inc.en_US
dc.titleA tetrabenzotriazaporphyrin based organic thin film transistor: Comparison with a device of the phthalocyanine analogueen_US
dc.typeArticleen_US
dc.identifier.doihttp://dx.doi.org/10.1149/2.0131504jss-
dc.relation.isPartOfECS Journal of Solid State Science and Technology-
pubs.issue4-
pubs.volume4-
Appears in Collections:Dept of Electronic and Electrical Engineering Research Papers

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